nents. A more serious shortcoming w

nents.
A more serious shortcoming was that it was once the universal practice to manufacture each of the components separately and then assemble the complete device by wiring the components together with metallic conductors. It was no good: the more components and interactions, the less reliable the system.
The development of rockets and space vehicles provided the final impetus to study the problem. However, many attempts were largely unsuccessful.
What ultimately provided the solution was the semiconductor integrated circuit, the concept of which has begun to take shape a few years after the invention of the transistor. Roughly between 1960 and 1963 a new circuit technology became a reality. It was microelectronics development that solved the problem.
The advent of microelectronic circuits has not, for the most part, changed the nature of the basic functional units: microelectronic devices are also made up of transistors, resistors, capacitors, and similar components. The major difference is that all these elements and their interconnections are now fabricated on single substrate in single series of operations.
Several key developments were required before the exciting potential of integrated circuits could be realized.
The development of microelectronics depended on the invention of techniques for making the various functional units on or in a crystal of semiconductor materials. In particular, a growing number of functions have been given over the circuit elements that perform best: transistors. Several kinds of microelectronic transistors have been developed, and for each of them families of associated circuit elements and circuit patterns have evolved.
It was the bipolar transistor that was invented in 1948 by John Bardeen, Walter H. Brattain and William Shockley of the Bell Telephone Laboratories. In bipolar transistors charge carries of both polarities are involved in their operation. They are also known as junction transistors. The npn and pnp transistors make up the class of devices called junction transistors.
A second kind of transistor was actually conceived almost 25 years before the bipolar devices, but its fabrication in quantity did not become practical until the early 1960's. This is the field-effect transistor. The one that is common in microelectronics is the metal-oxide-semiconductor field-effect transistor. The term refers to the three materials employed in its construction and is abbreviated MOSFET.
The two basic types of transistor, bipolar and MOSFET, divide microelectronic circuits into two large families. Today the greatest density of circuit elements per chip can be achieved with the newer MOSFET technology.
An individual integrated circuit (IC) on a chip now can embrace more electronic elements than most complex piece of electronic equipment that could be built in 1950.
In the first 15 years since the inception of integrated circuits, the number of transistors that could be placed on a single chip (with tolerable yield) has doubled every year. The 1980 state of art is about 70K density per chip. Nowadays we can put a million transistors on a single chip.
The first generation of commercially produced microelectronic devices is now referred to as small-scale integrated circuits (SSI). They included a few gates.

Результаты (английский) 1:

nents. A more serious shortcoming was that it was once the universal practice to manufacture each of the components separately and then assemble the complete device by wiring the components together with metallic conductors. It was no go d: the more components and interactions, the less reliable the system. The development of rockets and space vehicles provided the final impetus to study the problem. However, many attempts were largely unsuccessful. What ultimately provided the solution was the semiconductor integrated circuit, the concept of which has begun to take shape a few years after the invention of the transistor. Roughly between 1960 and 1963 a new circuit technology became a reality. It was microelectronics development that solved the problem. The advent of microelectronic circuits has not, for the most part, changed the nature of the basic functional units: microelectronic devices are also made up of transistors, resistors, capacitors, and similar components. The major difference is that all these elements and their interconnections are now fabricated on single substrate in single series of operations. Several key developments were required before the exciting potential of integrated circuits could be realized. The development of microelectronics depended on the invention of techniques for making the various functional units on or in a crystal of semiconductor materials. In particular, a growing number of functions have been given over the circuit elements that perform best: transistors. Several kinds of microelectronic transistors have been developed, and for each of them families of associated circuit elements and circuit patterns have evolved. It was the bipolar transistor that was invented in 1948 by John Bardeen, Walter H. Brattain and William Shockley of the Bell Telephone Laboratories. In bipolar transistors charge carries of both polarities are involved in their operation. They are also known as junction transistors. The npn and pnp transistors make up the class of devices called junction transistors. A second kind of transistor was actually conceived almost 25 years before the bipolar devices, but its fabrication in quantity did not become practical until the early 1960 's. This is the field-effect transistor. The one that is common in microelectronics is the metal-oxide-semiconductor field-effect transistor. The term refers to the three materials employed in its construction and is abbreviated MOSFET. The two basic types of transistor, bipolar and MOSFET, divide microelectronic circuits into two large families. Today the greatest density of circuit elements per chip can be achieved with the newer MOSFET technology. An individual integrated circuit (IC) on a chip now can embrace more electronic elements than most complex piece of electronic equipment that could be built in 1950. In the first 15 years since the inception of integrated circuits, the number of transistors that could be placed on a single chip (with tolerable yield) has doubled every year. The 1980 state of art is about 70K density per chip. Nowadays we can put a million transistors on a single chip. The first generation of commercially produced microelectronic devices is now referred to as small-scale integrated circuits (SSI). They included a few gates.

Результаты (английский) 3:

分。
更严重的缺点是，它曾经制造的每个组件分别的普遍实践和再组装成套装置的接线元件与金属导体。这是不好的：更多的组件和交互，不可靠的系统。
火箭和空间飞行器的发展问题研究提供了最后的动力。然而，许多尝试都是不成功的。
最终提供的解决方案是半导体集成电路，它的概念开始晶体管的发明几年后成形。大约在1960和1963个新的电路技术成为现实。它是微电子技术的发展解决了这个问题。
微电子电路的出现，不，最重要的是，改变的基本功能单位性质：微电子器件也由晶体管，电阻器，电容器，和类似的部件。主要的区别是，所有这些元素和它们的互连是目前在单系列操作单一基板制作。
几个关键的发展在集成电路的令人兴奋的潜力能够实现所需的。
微电子技术的发展依赖于技术的发明，或在一个半导体材料的晶体使各功能单元。特别是，越来越多的功能有了电路元件进行最佳：晶体管。微电子晶体管已经开发了几种，和他们每个人的家庭相关的电路元件和电路图案的演变。
是双极型晶体管，是在1948发明的约翰巴丁，Walter H.布拉顿和威廉肖克利在贝尔电话实验室。双极型晶体管中载流子的极性都参与他们的操作。他们也被称为结型晶体管。NPN和PNP晶体管组成的器件称为结型晶体管的类。
第二种晶体管实际上是怀孕将近25年前的双极型器件，但其制作数量不到1960年代初。这是场效应晶体管成为现实。这是一个常见的微电子技术是金属氧化物半导体场效应晶体管。这个词指的是三所采用的材料在其建设和略MOSFET。
晶体管的两种基本类型，双极型和MOSFET微电子电路，分为两大家庭。今天的电路元件，每片的最大密度可以用新的MOSFET技术实现。
单个集成电路（IC）芯片上现在可以接受更多的电子元件比最复杂的电子设备，可以建立在1950。由于集成电路的成立以来的第一次15年
，晶体管可以放置在一个芯片的数量（与可容忍的产量）每年都在翻番。艺术的1980个国家约为70K密度芯片。现在我们可以把一百万在单个芯片上的晶体管。
第一代商业化生产的微电子器件现在被称为小规模集成电路（SSI）。他们包括几大门。